Photosensitive Impurity-Assisted Tunneling (Au, 77°K) IN GaAs Tunnel Diodes
- 16 March 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 24 (11), 589-591
- https://doi.org/10.1103/physrevlett.24.589
Abstract
A photostimulated channel for tunneling in GaAs tunnel diodes is described and identified with the presence of Au impurities on the side of the space-charge region. The mechanism for the impurity-assisted tunneling is identified with an inelastic excitation of the electronic states associated with the Au impurities.
Keywords
This publication has 7 references indexed in Scilit:
- Resonance tunneling of field emitted electrons through adsorbates on metal surfacesSolid State Communications, 1969
- Theory of the Tunneling Spectroscopy of Collective ExcitationsPhysical Review B, 1968
- Photosensitive Tunneling and SuperconductivityPhysical Review Letters, 1968
- Observation of an Atomlike Energy Spectrum with LargeValues by Tunneling SpectroscopyPhysical Review Letters, 1968
- Molecular Vibration Spectra by Inelastic Electron TunnelingPhysical Review B, 1968
- Field Emission through Atoms Adsorbed on a Metal SurfaceThe Journal of Chemical Physics, 1967
- Molecular Vibration Spectra by Electron TunnelingPhysical Review Letters, 1966