Electronic level of interstitial hydrogen in GaAs

Abstract

The carbon-hydrogen complex in GaAs is evidenced by its stretching local mode of vibration. It is shown that even though carbon and hydrogen are present, this complex is not formed in n-type material; it only appears in p-type material. This is explained by the necessity for hydrogen to be in the positive charge state for the carbon-hydrogen complexes to be formed. The corresponding hydrogen electronic level is shown to be located around 0.5 eV above the top of the valence band.