Fine-structure splitting of the ground-state excitons in layer materials with stacking faults
- 1 April 1977
- journal article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 38 (2), 418-422
- https://doi.org/10.1007/bf02723513
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Influence of stacking disorder on the electronic properties of layered semiconductorsPhysical Review B, 1975
- GaSe: A layer compound with anomalous valence band anisotropySolid State Communications, 1974
- The band-gap excitons in gallium selenideIl Nuovo Cimento B (1971-1996), 1973
- The electronic structure of GaSeIl Nuovo Cimento B (1971-1996), 1973
- Excitons in GaSe polytypesPhysics Letters A, 1967