Crystal-Field Spectra ofImpurities in II-VI and III-V Compound Semiconductors
- 15 August 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 160 (3), 627-632
- https://doi.org/10.1103/physrev.160.627
Abstract
The spectra of in ZnSe, ZnTe, CdS, CdTe, GaP, and GaAs, and of in ZnSe, ZnTe, CdTe, GaP, and GaAs, are presented. It is found that a crystal-field description is useful even in such covalent materials. The crystal-field splitting depends on the impurity, but for a given impurity, varies by less than 25% through the II-VI series. The Racah parameter is strongly dependent on the host crystal and can decrease to less than a third of the free-ion value. From plots of the variation of and with properties of the impurity or host crystal, the spectra of hitherto unexplored systems may be predicted.
Keywords
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