Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors
- 18 December 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 41 (25), 1755-1758
- https://doi.org/10.1103/physrevlett.41.1755
Abstract
The lowest-energy defects in tetrahedrally bonded amorphous semiconductors, in particular silane-decomposed films, are analyzed semiquantitatively. The creation energy and effective correlation energy of each defect center are estimated. It is concluded that twofold-coordinated atoms play an important role in these films. The lowest-energy center yielding an EPR signal is not a dangling bond but a positively charged twofold-coordinated atom. The results explain the observed peaks in the density of localized states and the mechanism for the doping of these materials by P and As.Keywords
This publication has 11 references indexed in Scilit:
- Negative-States in the Gap in Hydrogenated Amorphous SiliconPhysical Review Letters, 1978
- Local structure, bonding, and electronic properties of covalent amorphous semiconductorsContemporary Physics, 1978
- Photoelectron Spectra of Hydrogenated Amorphous SiliconPhysical Review Letters, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970