Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1−xN using GaCl3 and InCl3
- 30 September 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 231 (1-2), 57-67
- https://doi.org/10.1016/s0022-0248(01)01453-1
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science (10555003, JSPS-RFTF97P00201)
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 35 references indexed in Scilit:
- Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloyJournal of Crystal Growth, 2000
- Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitridesJournal of Crystal Growth, 1999
- Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III NitridesJapanese Journal of Applied Physics, 1997
- Vapor Phase Epitaxy of InxGa1-xN Using InCl3, GaCl3 and NH3 SourcesJapanese Journal of Applied Physics, 1997
- Vapor phase epitaxy of InN using InCl and InCl3 sourcesJournal of Crystal Growth, 1997
- Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALEJournal of Crystal Growth, 1989
- Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium NitrideJournal of the Electrochemical Society, 1978
- Raman Scattering Spectroscopy Applied to the Study of Chemical Vapor Deposition SystemsJournal of the Electrochemical Society, 1976
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Mass Spectrometric Studies of Vapor-Phase Crystal GrowthJournal of the Electrochemical Society, 1972