Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties

Abstract

Bismuth titanate thin films are grown on SiO₂ /Si and Pt substrates at temperatures of 300–500°C by the laser ablation method, and their structural and electrical properties investigated. The films prepared on Si substrates with a Pt or Bi₂Ti₂O₇(BTO) buffer layer have c-axis and (117) orientations, although the films on Pt and SiO₂/Si substrates orient preferentially along the c-axis and (117) direction, respectively. Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO₂/Si and BTO/Si are observed corresponding to ferroelectric hysteresis of the film. Current-voltage characteristics of bismuth titanate films on Pt and BTO/Si substrates show low leakage current.