An empirical model for device degradation due to hot-carrier injection
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (4), 111-113
- https://doi.org/10.1109/edl.1983.25667
Abstract
An empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented. Relationships between device degradation, drain voltage, and substrate current are clarified on the basis of experiments and modeling. The presented model makes it possible to predict the lifetime of submicron devices by determining a certain criterion, such as taking a Vthshift of 10 mV over ten years as being allowable. This could also provide quantitative guiding principles for devising "hot-carrier resistant" device structures.Keywords
This publication has 7 references indexed in Scilit:
- Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI'sIEEE Transactions on Electron Devices, 1983
- Generation of interface states by hot hole injection in MOSFET'sIEEE Transactions on Electron Devices, 1982
- Hot-electron injection into the oxide in n-channel MOS devicesIEEE Transactions on Electron Devices, 1981
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981
- Hot-electron emission in N-channel IGFET'sIEEE Transactions on Electron Devices, 1979
- 1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraintsIEEE Journal of Solid-State Circuits, 1979
- Hot-electron emission from silicon into silicon dioxideSolid-State Electronics, 1978