Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4), 79-82
- https://doi.org/10.1016/0022-0248(91)90716-i
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ge Atomic Layer Epitaxy by Use of Ar Ion Laser HeatingJapanese Journal of Applied Physics, 1989
- Germanium Atomic Layer Epitaxy Controlled by Surface Chemical ReactionsJournal of the Electrochemical Society, 1989
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985