Etched buried heterostructure GaAs/GaAlAs injection lasers

Abstract

An injection laser is described in which a semicircular GaAs active region is completely surrounded by Ga_1−xAl_xAs by using selective etching and a single liquid‐phase epitaxial growth.The active region dimensions can be made much more symmetric than those obtained with conventional stripe geometry lasers resulting in improved optical characteristics and low room‐temperature threshold currents.