A comparative analysis of GaAs and Si ion-implanted MESFET's

Abstract

In this work, numerical calculations of device characteristics including theI-Vcharacteristic, small-signal parameters, and cutoff frequency are reported for silicon-implanted MESFET devices. The device dimensions and impurity profile are similar to those of GaAs MESFET's. Although Si MESFET devices have not found practical applications, these calculations provide a good comparison of the intrinsic frequency limits of GaAs and Si. Comparative analysis shows that there are differences in the magnitude of the small-signal parameters and channel current between GaAs and Si MESFET devices with the same geometries and implanted profiles. However, the general variations of small-signal parameters with respect to the drain voltage is similar for both materials. In addition, the calculations show that a 1-µm channel length GaAs MESFET device has a higher cut-off frequency by a factor of 1.8 than a similar Si MESFET. These results indicate that GaAs devices are intrinsically better suited for very high-speed switching devices.