Novel magnetic-field sensor using carrier-domain rotation: proposed device design
- 1 January 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (23), 608-610
- https://doi.org/10.1049/el:19760465
Abstract
A bipolar semiconductor device is described in which a mobile domain of current rotates around a circular path at a rate proportional to a magnetic field, when this is perpendicular to the planar structure, or follows the magnetic vector when this is in the same plane. Potentially high sensitivities are possible, since the response is inherently integrating; practical limitations to this are discussed.Keywords
This publication has 1 reference indexed in Scilit:
- Novel magnetic-field sensor using carrier-domain rotation: operation and practical performanceElectronics Letters, 1976