The Hall effect in III-V semiconductor assessment

Abstract

In this review article, the authors describe the use of the Hall effect in the characterisation of III-V semiconductor layers. The theoretical framework is entirely analytic and they show that this is not an impediment to obtaining useful quantitative data concerning the electrically active impurities present in a layer. The method is illustrated mainly in indium phosphide but gallium arsenide and other materials are discussed also. Comparison with numerical data is made where appropriate.