Results of ion implantation into silicon in the 100 MeV Range: I: Oxygen and boron implantation
- 16 April 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (2), 463-472
- https://doi.org/10.1002/pssa.2210700213
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Charge-exchange effects in energy-loss stragglingNuclear Instruments and Methods, 1980
- Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeVApplied Physics A, 1980
- Spatial correlation between primary and secondary defect profiles after high dose self-irradiation of Si crystalsRadiation Effects, 1979
- Der Einfluss von Ladungsfluktuationen auf die Energieverlustverteilung geladener TeilchenNuclear Instruments and Methods, 1974
- Straggling distributions of large energy lossesNuclear Instruments and Methods, 1968
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966