Observations on phosphorus stabilized SiO2films
- 1 February 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (2), 256-259
- https://doi.org/10.1109/t-ed.1966.15677
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Charge storage effects in silicon dioxide filmsIEEE Transactions on Electron Devices, 1965
- Stabilization of SiO2 Passivation Layers with P2O5IBM Journal of Research and Development, 1964
- Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating LayersIBM Journal of Research and Development, 1964
- Electrochemical Phenomena in Thin Films of Silicon Dioxide on SiliconIBM Journal of Research and Development, 1964
- Rectifying Action and the Electromotive Forces of the Films of Ta2O5 and SiO2 at High TemperaturesJournal of Applied Physics, 1963
- Diffusion of Oxygen in Vitreous SilicaJournal of the American Ceramic Society, 1963
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962