The isoelectronic trap bismuth in indium phosphide
- 15 September 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (18), 1555-1558
- https://doi.org/10.1016/0038-1098(71)90605-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Recombination processes associated with “Deep states” in gallium phosphideJournal of Luminescence, 1970
- Optical Absorption Due to Excitation of Electrons Bound to Si and S in GaPPhysical Review B, 1969
- The optical frequencies and dielectric constants of InPSolid State Communications, 1969
- Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium PhosphidePhysical Review B, 1969
- Evidence for donor-acceptor recombination in InP by time-resolved photoluminiscence spectroscopySolid State Communications, 1969
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- LUMINESCENCE DUE TO THE ISOELECTRONIC SUBSTITUTION OF BISMUTH FOR PHOSPHORUS IN GALLIUM PHOSPHIDEApplied Physics Letters, 1966
- Exciton Absorption and Emission in InPPhysical Review B, 1964
- A theory of edge-emission phenomena in CdS, ZnS and ZnOJournal of Physics and Chemistry of Solids, 1959