X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+And N+
- 1 January 1971
- journal article
- Published by Cambridge University Press (CUP) in Advances in X-ray Analysis
- Vol. 15, 504-515
- https://doi.org/10.1154/s0376030800011174
Abstract
Double crystal diffractometer measurements on silicon bombarded to a fluence >1016ions/cm2with 1 MeV deuterium and 2 MeV nitrogen are reported. Such measurements provide insight into radiation damage in silicon through the observation of Bragg case pendelloesung fringes and double peak rocking curves. Bragg case pendelloesung fringes are used to determine nondestructively the projected range of ions in silicon. Double peak rocking curves are used to measure changes in lattice parameter with the ion dose. Finally, a model of radiation damage in silicon is presented.Keywords
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