Ion-implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1), 15-17
- https://doi.org/10.1063/1.89829
Abstract
Depth profiles of Se‐implanted GaAs samples have been measured using secondary ion mass spectrometry (SIMS). Analyses performed on liquid‐nitrogen and room‐temperature implants into Cr‐doped substrates indicate that Se diffusion during subsequent heat treatment is negligible when the samples are annealed at 1000 °C for 15 min. A 12‐h anneal at 1000 °C does, however, produce a diffused profile but with a diffusion constant of 2.8×10−15 cm2/sec as compared with the value 1×10−13 cm2/sec for thermal diffusion of Se at this temperature.Keywords
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