Improvement of gas-sensing properties of SnO2 by surface chemical modification with diethoxydimethylsilane
- 1 December 1998
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 53 (3), 147-154
- https://doi.org/10.1016/s0925-4005(99)00013-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Improvement of Gas-Sensing Properties of a Pd/SnO2 Sensor by SiO2 Coating Films Formed by Dipping MethodJournal of the Ceramic Society of Japan, 1998
- Gas-Sensing Properties of Pd/SnO2 Sensors Dipped in a Diethoxydimethylsilane Sol SolutionJournal of the Ceramic Society of Japan, 1998
- Effect of Gas Diffusion Process on Sensing Properties of SnO2 Thin Film Sensors in a SiO2 / SnO2 Layer‐Built Structure Fabricated by Sol‐Gel ProcessJournal of the Electrochemical Society, 1994
- Sensitivity and selectivity enhancement in semiconductor gas sensorsPublished by SPIE-Intl Soc Optical Eng ,1991
- Hydrolysis and polycondensation of dimethyldiethoxysilane and methyltriethoxysilane as materials for the sol-gel processJournal of Non-Crystalline Solids, 1986
- Effects of additives on semiconductor gas sensorsSensors and Actuators, 1983
- Hall measurement studies and an electrical conduction model of tin oxide ultrafine particle filmsJournal of Applied Physics, 1982
- Temperature programmed desorption study of water adsorbed on metal oxides. 2. Tin oxide surfacesThe Journal of Physical Chemistry, 1981
- Interactions of tin oxide surface with O2, H2O AND H2Surface Science, 1979
- A New Detector for Gaseous Components Using Semiconductive Thin Films.Analytical Chemistry, 1962