Electrical properties of gatexSe1–x crystals
- 16 January 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 39 (1), 65-71
- https://doi.org/10.1002/pssa.2210390106
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Atomic structure of a 4H GaSe polytype named δ-typeActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1975
- Electrical properties of GaTe grown by various methodsPhysica Status Solidi (a), 1975
- Electrical and Optical Properties of GaSeJapanese Journal of Applied Physics, 1971
- Mobility of Charge Carriers in Semiconducting Layer StructuresPhysical Review B, 1967
- Electron-Phonon Interaction in Semiconducting Layer StructuresPhysical Review B, 1964
- The crystal structures of semiconductors and a general valence ruleActa Crystallographica, 1964
- Electrical resistivity and hall effect of single crystals of GaTe and GaSeJournal of Physics and Chemistry of Solids, 1962
- Electrical Properties of-Type GermaniumPhysical Review B, 1954