Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC
- 31 December 2003
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 340-342, 151-155
- https://doi.org/10.1016/j.physb.2003.09.048
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- 240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grownSiCPhysical Review B, 2003
- Signature of intrinsic defects in SiC:Ab initiocalculations of hyperfine tensorsPhysical Review B, 2003
- UD-3 defect inandSiC: Electronic structure and phonon couplingPhysical Review B, 2002
- High-purity semi-insulating 4H-SiC grown by the seeded-sublimation methodJournal of Electronic Materials, 2002
- Divacancy inandAn extremely stable defectPhysical Review B, 2002
- The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonanceApplied Physics Letters, 2002
- Structure of the silicon vacancy inafter annealing identified as the carbon vacancy–carbon antisite pairPhysical Review B, 2001
- Deep-level luminescence at 1.0 eV in 6H SiCMRS Proceedings, 2000
- HTCVD growth of semi-insulating 4H-SiC crystals with low defect densityMRS Proceedings, 2000
- Passage Effects in Paramagnetic Resonance ExperimentsBell System Technical Journal, 1960