Epitaxial Films of Silicon on Sapphire Formed by Vacuum Evaporation and Their Electrical Properties
- 1 May 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (6), 2969-2971
- https://doi.org/10.1063/1.1656708
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Electrical Properties of Silicon Films Grown Epitaxially on SapphireJournal of Applied Physics, 1967
- The epitaxy of silicon on alumina—structural effectsPhilosophical Magazine, 1966
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949