Electronic state localization in semiconductor superlattices
- 1 July 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1), 98-100
- https://doi.org/10.1063/1.94983
Abstract
It is shown that in semiconductor superlattices slight fluctuations in the layer thicknesses and alloy compositions are likely to cause strong localization of electronic states. Such localization will hinder miniband formation or band folding expected in an ideal superlattice. The localization tendency can be substantially reduced by decreasing the barrier thickness and/or potential barrier height.Keywords
This publication has 5 references indexed in Scilit:
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Determination of the valence-band discontinuity of InP1−xGaxP1−zAsz (x∼0.13, z∼0.29) by quantum-well luminescenceApplied Physics Letters, 1979
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970