Quality of AlAs-like and InSb-like interfaces in InAs/AlSb superlattices: An optical study
- 3 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (18), 2274-2276
- https://doi.org/10.1063/1.109393
Abstract
Two short‐period InAs/AlSb superlattices, grown with an AlAs‐like interface and an InSb‐like interface, respectively, were studied with Raman spectroscopy, x‐ray diffraction, and ellipsometry. Our measurements show that the InSb‐like interface grows perfectly pseudomorphically, whereas the sample with the AlAs‐like interface shows indications of relaxation and As interdiffusion. This different interface quality seems to be a fundamental problem, rather than the result of the growth technique.Keywords
This publication has 17 references indexed in Scilit:
- Raman scattering from InAs/AlSb ultrathin-layer superlattices grown by molecular beam epitaxySurface Science, 1992
- Interface roughness scattering in InAs/AlSb quantum wellsApplied Physics Letters, 1992
- Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modesApplied Physics Letters, 1992
- Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interfaceJournal of Applied Physics, 1990
- Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wellsJournal of Applied Physics, 1989
- Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAsApplied Physics Letters, 1989
- High Resolution X-Ray Diffraction in Multilayered Semiconductor Structures and SuperlatticesPhysica Scripta, 1989
- Magnetic behavior and structure of compositionally modulated Cu-Ni thin filmsPhysical Review B, 1982
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimetersReview of Scientific Instruments, 1978
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974