Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

Abstract

A fully transparent nonvolatile memory with the conventional sandwich gate insulator structure was demonstrated. Wide band gap amorphous GaInZnO $\left(a\text{-GIZO}\right)$ thin films were employed as both the charge trap layer and the transistor channel layer. An excellent program window of 3.5 V with a stressing time of 100 ms was achieved through the well-known Fowler–Nordheim tunneling method. Due to the similar energy levels extracted from the experimental data, the asymmetrical program/erase characteristics are believed to be the result of the strong trapping of the injected negative charges in the shallow donor levels of the GIZO film.