Structural and electrical properties of Fe-doped thin films
- 21 May 1998
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 31 (10), 1149-1154
- https://doi.org/10.1088/0022-3727/31/10/004
Abstract
The present study discusses the effect of iron doping in thin films deposited by rf sputtering. Iron doping induces a structural transformation from anatase to rutile and electrical measurements indicate that iron acts as an acceptor impurity. Thermoelectric power measurement shows a transition between n-type and p-type electrical conduction for an iron concentration around 0.13 at.%. The highest p-type conductivity at room temperature achieved by iron doping was .Keywords
This publication has 15 references indexed in Scilit:
- Ce-doped TiO 2 Insulators in Thin Film Electroluminescent DevicesJapanese Journal of Applied Physics, 1997
- Preparation and Electrochromism of RF-Sputtered TiO2 FilmsJapanese Journal of Applied Physics, 1997
- Role of He Gas Mixture on the Growth of Anatase and Rutile TiO 2 Films in RF Magnetron SputteringJapanese Journal of Applied Physics, 1997
- Temperature effects on the size of anatase crystallites in MoTiO2 and WTiO2 powdersSensors and Actuators B: Chemical, 1996
- TiO2 anatase thin films as gas sensorsSensors and Actuators B: Chemical, 1995
- Electrical Properties of Manganese‐Doped Titanium DioxideJournal of the American Ceramic Society, 1994
- Electrical and optical properties of TiO2 anatase thin filmsJournal of Applied Physics, 1994
- Process effects on structural properties of TiO2 thin films by reactive sputteringJournal of Vacuum Science & Technology A, 1992
- Investigations of TiO2 films deposited by different techniquesThin Solid Films, 1991
- Quantitative Analysis of Anatase-Rutile Mixtures with an X-Ray DiffractometerAnalytical Chemistry, 1957