Strain energy and critical thickness of heteroepitaxial InGaAs layers on GaAs substrate
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4), 169-173
- https://doi.org/10.1016/0022-0248(91)90733-l
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966