High efficiency submilliamp vertical cavity lasers with intracavity contacts

Abstract

Contacts have been made to p- and n-type layers on opposite sides of the active region within the cavity of an InGaAs vertical cavity surface emitting laser. The two concentric ring contacts allow all electrical connections on and emission from the top surface of a semi-insulating GaAs substrate. The design includes a novel current leveling layer to minimize current crowding effects. A high external quantum efficiency of 46% has been measured with maximum output powers up to 6 mW for a 15 /spl mu/m diameter device and threshold currents of 0.72 mA for a 7 /spl mu/m diameter laser.