The preferred orientation of silicon films grown by Lpcvd at relatively low temperatures
- 1 March 1988
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 7 (3), 247-250
- https://doi.org/10.1007/bf01730186
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- A programming package for the study of high angle grain boundaries by using TEMComputer Physics Communications, 1983
- Interface structures during solid-phase-epitaxial growth in ion implanted semiconductors and a crystallization modelJournal of Applied Physics, 1982
- Grain boundary analysis in TEM. I. Practical determination of bicrystal orientationsPhysica Status Solidi (a), 1978