On the physics of metal-semiconductor interfaces
- 1 March 1990
- journal article
- Published by IOP Publishing in Reports on Progress in Physics
- Vol. 53 (3), 221-278
- https://doi.org/10.1088/0034-4885/53/3/001
Abstract
No abstract availableThis publication has 181 references indexed in Scilit:
- Photoemission study of alkali/GaAs(110) interfacesZeitschrift für Physik B Condensed Matter, 1989
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- Deep energy levels for defects at the AlAs (110) surfaceApplications of Surface Science, 1982
- Schottky barriers on p-type siliconSolid-State Electronics, 1971
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- The Dipole Moment of Hydrogen Fluoride and the Ionic Character of BondsJournal of the American Chemical Society, 1946
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939
- Die Oberflächenwellen in der Elektronentheorie der MetalleThe European Physical Journal A, 1935
- THE NATURE OF THE CHEMICAL BOND. IV. THE ENERGY OF SINGLE BONDS AND THE RELATIVE ELECTRONEGATIVITY OF ATOMSJournal of the American Chemical Society, 1932