Ionized cluster beam deposition offers the capability of introducing useful kinetic energy and chemical activity during film formation processes. This allows high quality epitaxy of materials at low temperature onto a wide variety of substrate surfaces and even permits the formation of thin film materials not previously possible. Capabilities are demonstrated by epitaxial Al films on various kinds of substrates, very large area deposition of GaAs, composition controlled Cd1−xMnxTe films, and CdTe/PbTe multilayer epitaxial films.