Simultaneous observations of partially oxidized surfaces by AES and SIMS for Al, Si, Ti, V, and Cr

Abstract

The advantage of performing simultaneous SIMS and AES analysis together with measurements of sputtering rates is demonstrated by studies of oxidized Al on Si. As the OKLL Auger peak increases, due to increased oxygen coverage, there is enhanced emission of metal ions. Normalized SIMS and Auger signals for Al, Si, Ti, V, and Cr are intrinsic to each metal−oxygen system. From estimates of the escape depth of OKLL Auger electrons, the mean escape depths of metal ions from oxide were estimated. A step−like decrease in sputtering rate is observed and correlated with the thickness of the oxide layer. The Ag−O system was also studied and found to give an anomalous effect.