GaAs FET large-signal model and its application to circuit designs

1 February 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (2), 171-175
https://doi.org/10.1109/t-ed.1981.20306

Abstract

A large-signal GaAs FET model is derived based on dc characteristics of the device. Analytical expressions of modeled nonlinear elements are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large-signal model is demonstrated.

Keywords

GAAS FET
CIRCUIT
LARGE SIGNAL MODEL
NONLINEAR
EXPERIMENTALLY

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