Externally generated piezoelectric effect in semiconductor micro- structures
- 15 October 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (16), 9126-9128
- https://doi.org/10.1103/physrevb.44.9126
Abstract
We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) As/GaAs single quantum well. For T∥[110] we have observed a red shift of several peaks and an increase in the intensities of several ‘‘symmetry-forbidden’’ transitions; effects not seen for T∥[100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T∥[110].
Keywords
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