Abstract
Phase formation has been investigated in the following thin-film systems: Al/Pt, Pt2Al/Al, Pt8Al21/Pt, Pt/PtAl, and Pt/Pt5Al21/Al, between 225 and 550 °C. The films were prepared by sequential evaporation and coevaporation, annealed under vacuum, and analyzed by Rutherford backscattering and x-ray diffraction. In all cases, except for Pt/PtAl, the initial phase formed was Pt2Al3, followed by the more Pt- or Al-rich phases, depending on the overall stoichiometry. Al is the dominant moving species during the formation of Pt2Al3.

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