Calculation of the atomic geometries of the (110) surfaces of III–V compound semiconductors
- 2 January 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 149 (2-3), 366-380
- https://doi.org/10.1016/0039-6028(85)90069-x
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Reconstruction of the (110) surfaces for III–V semiconductors; Five systems involving In or SbSurface Science, 1984
- Semiconductor surface structuresSurface Science Reports, 1983
- Structural chemistry of the cleavage faces of compound semiconductorsJournal of Vacuum Science & Technology B, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Theory of core excitonsPhysical Review B, 1981
- Reconstruction of the (110) surface of III–V semiconductor compoundsSurface Science, 1981
- Theory of Frenkel core excitons at surfacesPhysical Review B, 1981
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- (110) surface atomic structures of covalent and ionic semiconductorsPhysical Review B, 1979
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978