On the influence of crystal orientation on solution-grown GaAs laser diodes
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (4), 201-204
- https://doi.org/10.1109/jqe.1968.1075071
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Threshold current density in solution-grown GaAs laser diodesIEEE Journal of Quantum Electronics, 1967