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Trap-limited interstitial diffusion and enhanced boron clustering in silicon
Home
Publications
Trap-limited interstitial diffusion and enhanced boron clustering in silicon
Trap-limited interstitial diffusion and enhanced boron clustering in silicon
PS
P. A. Stolk
P. A. Stolk
HG
H.-J. Gossmann
H.-J. Gossmann
DE
D. J. Eaglesham
D. J. Eaglesham
DJ
D. C. Jacobson
D. C. Jacobson
JP
J. M. Poate
J. M. Poate
HL
H. S. Luftman
H. S. Luftman
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30 January 1995
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 66
(5)
,
568-570
https://doi.org/10.1063/1.114015
Abstract
No abstract available
Keywords
MOLECULAR BEAM EPITAXY
SUPERLATTICES
PENETRATION DEPTH
ION IMPLANTATION
Cited by 107 articles