In present work we report about development of semiconductor lasers and high-speed photodiodes based on GaInSbAs/GaAlSbAs solid solutions for 2.0-2.5 μm spectral range, which operate at the room temperature. Characteristics of.the lasers of several types are described. Among them there are pulsed lasers with output optical power reaching 1 W, cw lasers operating at room temperature at the wavelength of 2.0-2.2 μm, and pulsed lasers for the wavelength up to 2.5 μm. Properties of the developed photodetectors are also presented. There are described high-speed (τ<0.5ns) p-i-n photodiodes with quantum efficiency of 0.6 (without antire-flection coating) and avalanche photodiodes with separated absorbtion and multiplication regions (SAM APD), characterizing by multiplication factor of 20-30 at room temperature.