The correlation of dimensionality with emitted wavelength and ordering of freshly produced porous silicon
- 1 February 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (3), 1351-1356
- https://doi.org/10.1063/1.361032
Abstract
Freshly produced red, yellow and green emitting porous Si specimens have been studied by NEXAFS and EXAFS (near edge and extended x-ray absorption fine structure). The emission peaks are at 690, 580, and 520 nm, which almost covers the full visible range that direct anodization can achieve. The correlation between the co-ordination numbers of the first, second and third Si neighbor shells from Fourier transform fitting of EXAFS and both emission peak energies and optical band gaps estimated by PLE (photoluminescence excitation dependence) suggests that the nanostructures of the PS are nanowires, rather than nanocrystalline. Two types of quantum nanowire with one and one-plus-a-fraction dimensionality are proposed to interpret the correlation. The order factors of the theoretical fits suggest the nanowires of the freshly produced PS have crystalline cores.Keywords
This publication has 29 references indexed in Scilit:
- Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matricesApplied Physics Letters, 1995
- Dimensions of luminescent oxidized and porous silicon structuresPhysical Review Letters, 1994
- Blue Light Emission from Rapid-Thermal-Oxidized Porous SiliconJapanese Journal of Applied Physics, 1994
- A microstructural study of porous siliconJournal of Applied Physics, 1993
- Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallitesPhysical Review B, 1993
- Further evidence for quantum confinement in porous siliconApplied Physics Letters, 1993
- Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescenceNature, 1993
- Evidence for quantum confinement in porous silicon from soft x-ray absorptionApplied Physics Letters, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990