Cathodic arc ion implantation for semiconductor devices

Abstract

Cathodic arc ion implantation was used to make n⁺–p junction diodes and n‐channel metal–oxide–semiconductor (MOS) transistors. Antimony, with a dosage in the range of 6×10¹⁴ to 4×10¹⁵ ions/cm², was implanted as the n‐type dopant into p‐type 〈100〉 oriented silicon with a resistivity in the range of 2–5 Ω cm. The implantation voltage applied to the substrate was approximately −20 kV. Regular thermal oxidation and photolithography techniques were used in making the devices. The I–V characteristics of both diodes and transistors and the reverse breakdown of the n⁺–p junction were found to be comparable to the devices made by diffusion under similar conditions. The standard deviation of the sheet resistance of the implanted layer across a 3 in. wafer was found to be less than 4% of the average value. The implantation dosage and distribution characteristics were estimated by secondary ion mass spectrometry (SIMS) and <named-content xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"...