GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%
- 1 October 1969
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (7), 229-231
- https://doi.org/10.1063/1.1652980
Abstract
External quantum efficiencies η as high as 7.2% have been obtained for gallium phosphide red light emitting diodes. The p‐n junctions were prepared using a p‐on‐n liquid phase epitaxy process in which the dopant levels significantly differ from those previously reported. Doping profiles for these junctions are compared with earlier n‐on‐p structures (η = 1–2%) and it is suggested that the observed high efficiencies result from (1) more efficient electron injection, (2) increased O concentration in the p‐type layers which may result in a higher concentration of Zn–O complexes, and/or (3) fewer free holes in the p region contributing to nonradiative recombination.Keywords
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