A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (7), 976-981
- https://doi.org/10.1109/tmtt.1982.1131186
Abstract
This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and +-1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines. In this approach GaAs FET's periodically load input and output microstrip lines and provide the coupling between them with proper phase through their transconductance. Experimental results and the circuit details of such a structure are discussed. Initial results of a noise analysis and predictions on the noise performance are also given.Keywords
This publication has 3 references indexed in Scilit:
- Monolithic GaAs travelling-wave amplifierElectronics Letters, 1981
- A MESFET distributed amplifier with 2 GHz bandwidthProceedings of the IEEE, 1969
- Distributed AmplificationProceedings of the IRE, 1948