Resistivity and deep impurity levels in silicon at 300 K

Abstract

Families of curves of the resistivity at 300 K for n- and p-type silicon doped with deep activation energy impurities are presented as a function of impurity concentration. These curves are based on analyses of Irvin's curves, applicable to the shallow activation energy impurities, and on the properties of the deeper activation energy impurities. These curves apply to impurities with activation energies that are independent of concentration. Since Irvin's p-type curve appears to be heavily influenced by Si:Ga data in the 1016-1018-cm-3range, a boron curve is calculated for this range. This curve may be considered a correction to Irvin's p-curve in this impurity range.