Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C

Abstract

Precise cell dimensions of GaAs, GaAs_0.59P_0.41, GaAs_0.5P_0.5, and GaP have been determined from x‐ray powder diffraction patterns from −62° to 200°C. Within the temperature range investigated, the constant thermal coefficients of expansion are, respectively, 6.86×10⁻⁶, 7.81×10⁻⁶, 5.91×10⁻⁶, and 5.81×10⁻⁶°C⁻¹. The cell dimension of pure GaP (impurity less than 3.0 ppm) is 5.4495±0.0001 Å at 24°C.