Silicon metal–oxide–semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing

Abstract

An integrated lightly doped drain-metal–oxide–semiconductor field effect transistor (LD-MOSFET) is used to control the electron supply of a silicon field emission array (FEA), resulting in low voltage switching and stabilization of emission current. The LD-MOSFET-driven field emission array was fabricated using isotropic and anisotropic etching of silicon, oxidation sharpening, chemical vapor deposition, and chemical mechanical polishing. Current–voltage characterization of the LD-MOSFET-driven FEA demonstrated modulation of electron emission by the MOSFET gate voltage and the reduction of current fluctuation.