${}^{17}O$ Hyperfine Structure of the Neutral ( $S = 1$ ) Vacancy-Oxygen Center in Ion-Implanted Silicon

The intensity of the

{}^{17}O

hyperfine spectrum associated with the

{}^{28}{Si}

{}^{17}O

{}^{28}{Si}

isotopic configuration of the vacancy-oxygen (

Si - S 1

) center was enhanced by ion implantation of

{}^{17}O

into silicon. The

Si - S 1

{}^{17}O

hyperfine spectrum was measured by electron paramagnetic resonance. An analysis of the

Si - S 1

{}^{17}O

hyperfine spectrum indicates that the numerical values for the elements in the

{}^{17}O

hyperfine coupling tensor

\overset{}{A}

are

A_{xx} = - {11.5}_{1} \times 10^{- 4}

{cm}^{- 1}

A_{yy} = - {12.9}_{0} \times 10^{- 4}

{cm}^{- 1}

, and

A_{zz} = - {13.3}_{9} \times 10^{- 4}

{cm}^{- 1}

. The

{}^{17}O

hyperfine coupling tensor was analyzed in terms of the admixture of oxygen-valence orbitals into the one-electron paramagnetic molecular orbitals

χ_{1} (Γ_{1})

and

χ_{4} (Γ_{4})

. In particular, only 4.1% of

〈 χ_{1} (Γ_{1}) | χ_{1} (Γ_{1}) 〉

and 1.8% of

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O17Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon