Electron trapping by substitutional alkali ion impurities in CsI
- 31 July 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 19 (7), 681-683
- https://doi.org/10.1016/0038-1098(76)91104-2
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Luminescence phenomena in CsI:NaJournal of Luminescence, 1975
- Lattice-relaxation effects at point imperfections in semiconductorsPhysical Review B, 1975
- Theory of isoelectronic trapsJournal of Luminescence, 1973
- Binding to Isoelectronic Impurities in SemiconductorsPhysical Review Letters, 1972
- Kinetics of Localized Exciton Recombination in CsIPhysica Status Solidi (b), 1971
- Recombination processes associated with “Deep states” in gallium phosphideJournal of Luminescence, 1970
- Energy Bands of CsI (Green's Function Method)Physica Status Solidi (b), 1969
- Energy Bands in CsIJournal of the Physics Society Japan, 1968
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Cohesion of Ionic Solids in the Born ModelPublished by Elsevier ,1964