Gain measurements on GaAs-based quantum cascade lasers using a two-section cavity technique
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 36 (6), 736-741
- https://doi.org/10.1109/3.845731
Abstract
A two-section cavity device has been used to measure gain spectra and waveguide losses of a GaAs-based quantum cascade laser. The device operates at 8.9 /spl mu/m and optical confinement is obtained by means of Al-free cladding layers. We investigated the gain characteristics in a spectral window of /spl sim/60 meV and up to 200 K. For current densities ranging from 1 to 8 kA/cm/sup 2/, we report a constant gain coefficient of 13 cm/kA at 4 K and 6 cm/kA at 200 K. At low temperatures and for current densities above 8 kA/cm/sup 2/, we observe gain saturation which we attribute to a reduced electron injection in the active region caused by space charge effects. We report a value of 22 cm/sup -1/ for the waveguide losses in good agreement with previous measurements.Keywords
This publication has 18 references indexed in Scilit:
- Spectroscopic determination of the electron distribution in a quantum cascade structureApplied Physics Letters, 1999
- High peak power (1.1 W) (Al)GaAs quantum cascade laser emitting at 9.7 [micro sign]mElectronics Letters, 1999
- Laser action by tuning the oscillator strengthNature, 1997
- Mid-infrared (8.5 μm) semiconductor lasers operating at room temperatureIEEE Photonics Technology Letters, 1997
- Long wavelength infrared (λ≂11 μm) quantum cascade lasersApplied Physics Letters, 1996
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser materialElectronics Letters, 1995
- Continuous wave operation of a vertical transition quantum cascade laser above T=80 KApplied Physics Letters, 1995
- Vertical transition quantum cascade laser with Bragg confined excited stateApplied Physics Letters, 1995
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975