Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs

1 January 1978

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 14 (23), 737-739
https://doi.org/10.1049/el:19780499

Abstract

In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.

Keywords

THIN INTERFACIAL OXIDE LAYERS
AU-INGAAS
N-INXGA1-XAS
SCHOTTKY CONTACTS
EFFECTIVE BARRIER HEIGHT
AU-INP

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